Method for producing an InSb thin film element
US4177298A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1978 |
| Grant date | Dec 4, 1979 |
| Priority date | — |
| Expiry date | Mar 20, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.