Amplifying gate thyristor with gate turn-off (G.T.O.)
US4177478A · kind A · utility
7Cited by
5References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 4, 1978 |
| Grant date | Dec 4, 1979 |
| Priority date | — |
| Expiry date | Jan 4, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/206
Abstract
The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to an N layer designed to transmit to the base the negative pulses applied to the gate opening the thyristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.