Process for fabricating thin film and glass sheet laminate
US4179324A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1977 |
| Grant date | Dec 18, 1979 |
| Priority date | — |
| Expiry date | Nov 28, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor thin film and glass stratum laminate is formed by depositing a semiconductor thin film onto a temporary substrate having a carbon coating to which the film adheres. Processing of the semiconductor thin film for selected performance characteristics is accomplished while the film is affixed to the temporary substrate. The processed thin film is transferred and electrostatically bonded to the glass stratum by exposure to a thermal environment at or below the softening point of the glass stratum and by application of an electric potential across the thin film and glass. The bonded thin film and glass stratum laminate is separated from the temporary substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.