Low temperature CMOS/SOS process using dry pressure oxidation
US4179792A · kind A · utility
6Cited by
2References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 10, 1978 |
| Grant date | Dec 25, 1979 |
| Priority date | — |
| Expiry date | Apr 10, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.