Method for providing a metal silicide layer on a substrate
US4180596A · kind A · utility
107Cited by
9References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1977 |
| Grant date | Dec 25, 1979 |
| Priority date | — |
| Expiry date | Jun 30, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.