Method for making defect-free zone by laser-annealing of doped silicon
US4181538A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1978 |
| Grant date | Jan 1, 1980 |
| Priority date | — |
| Expiry date | Sep 26, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/097
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.