Photodiode circuit arrangements
US4181863A · kind A · utility
13Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 1978 |
| Grant date | Jan 1, 1980 |
| Priority date | — |
| Expiry date | Sep 26, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Temperature regulation of an avalanche photodiode is obtained by internal heating, by passing a reverse current through the breakdown region of the photodiode. In operation, an empirically-derived, reverse bias potential, equal to the breakdown potential at the desired operating temperature, is applied; and when incident radiation is to be detected the reverse bias potential is temporarily lowered to an empirically-derived operating value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.