Semiconductor liquid junction photocell using surface modified GaAs electrode
US4182796A · kind A · utility
7Cited by
0References
4Claims
0Family size
Inventors
Key dates
| Filing date | May 18, 1978 |
| Grant date | Jan 8, 1980 |
| Priority date | — |
| Expiry date | May 18, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor liquid junction photocell using a photoactive electrode comprising GaAs has greatly improved solar energy to electrically conversion efficiency when compared to prior art semiconductor liquid junction photocells using GaAs electrodes. The improved efficiency is obtained by material, such as ruthenium, cobalt, rhodium or lead, on the electrode surface. Efficiency is still further increased by texturizing the surface of the GaAs electrode prior to addition of the material. Efficiencies under AM1 conditions are approximately 12 percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.