Field effect transistors
US4183033A · kind A · utility
6Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1978 |
| Grant date | Jan 8, 1980 |
| Priority date | — |
| Expiry date | Mar 13, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A field effect transistor for operation at temperatures below 150.degree. K. is capable of operating at low voltage and current levels at high speed. The transistor is fabricated by deposition of metal source drain and gate electrodes upon a layer of semi-conductor having a concentration of free carriers less than 10.sup.16 cm.sup.-3 formed on a substrate having a resistivity greater than 10.sup.4 ohm-cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.