Inverted heterojunction photodiode
US4183035A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1978 |
| Grant date | Jan 8, 1980 |
| Priority date | — |
| Expiry date | Jun 26, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/912
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial active layer on the buffer layer. The buffer layer is either Pb.sub.(1-x) S.sub.x Te or Pb.sub.1-x Se.sub.x Te with the atomic fraction of S or Se, x, being greater than 0 but less than 0.1. The active layer is Pb.sub.1-y Sn.sub.y Te with the atomic fraction of Sn, y, being greater than 0 but less than 0.3. There is a p-n junction created in the active layer with the n side of the junction being adjacent the buffer layer. Metal is deposited on the substrate and on the active layer to provide electrical contact to the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.