Semiconductor laser device
US4183038A · kind A · utility
12Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1978 |
| Grant date | Jan 8, 1980 |
| Priority date | — |
| Expiry date | Mar 29, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
N type GaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr. Zn is diffused into predetermined portions of those layers to a depth reaching the substrate to form pn junctions between the original n type regions of the layers and their regions are converted to the p from the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.