Control of capillary die shaped crystal growth of silicon and germanium crystals
US4184907A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 1977 |
| Grant date | Jan 22, 1980 |
| Priority date | — |
| Expiry date | Mar 17, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed of growing a crystalline body of a selected material so that the body has a selected cross-sectional shape. The method includes the steps normally employed in known capillary die processes and further includes observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.