Thin film strain gage and process therefor
US4185496A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1978 |
| Grant date | Jan 29, 1980 |
| Priority date | — |
| Expiry date | Aug 28, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2287
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.