IGFET with partial planar oxide
US4186408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1977 |
| Grant date | Jan 29, 1980 |
| Priority date | — |
| Expiry date | Jul 27, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is a process of fabricating semiconductor devices including an insulating film across the surface that has a planar configuration. Alternatively, the film may be of uniform thickness and non-planar configuration. Both the planar and uniform thickness characteristics of the insulating film permit openings to be formed therein without over etching a defined surface area and conductors to be formed thereon without broadening. An important feature of the invention is utilizing the differential growth rate of films on semiconductor surfaces and/or selection of a suitable initial film thickness as a diffusion mask. The initial film thickness also contributes to a planar or uniform film thickness or other configuration across the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.