Method for etching silicon and a residue and oxidation resistant etchant therefor
US4187140A · kind A · utility
13Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1978 |
| Grant date | Feb 5, 1980 |
| Priority date | — |
| Expiry date | Oct 11, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol. There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.