Patent · US Expired

Solid state current limiter

US4187513A · kind A · utility

3Cited by
6References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 30, 1977
Grant dateFeb 5, 1980
Priority date
Expiry dateNov 30, 1997

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S257/914
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device is disclosed which uses the phenomenon of "scattering limited velocity effect" for practical current limiting purposes. A monolithic chip of semiconductor material has a plurality of active spot regions or conduction channels formed by an encompassing inactive region which surrounds and separates each of the channels. The inactive region blocks current flow and performs a heat sinking function, the latter being necessary because of the high power density within the conduction channels at which the "scattering limited velocity effect" is exhibited.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.