Solid state current limiter
US4187513A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1977 |
| Grant date | Feb 5, 1980 |
| Priority date | — |
| Expiry date | Nov 30, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed which uses the phenomenon of "scattering limited velocity effect" for practical current limiting purposes. A monolithic chip of semiconductor material has a plurality of active spot regions or conduction channels formed by an encompassing inactive region which surrounds and separates each of the channels. The inactive region blocks current flow and performs a heat sinking function, the latter being necessary because of the high power density within the conduction channels at which the "scattering limited velocity effect" is exhibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.