Microwave FET power circuit
US4189682A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 1978 |
| Grant date | Feb 19, 1980 |
| Priority date | — |
| Expiry date | Jul 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/608
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) is comprised of a plurality of unit transistors having a common gallium arsenide substrate with an N-type active region. Each unit transistor is comprised of a unit gate, a unit drain and a unit source. The FET is mounted in a flip-chip carrier that connects all of the unit sources together to form a first electrode of the FET. Additionally, the first electrode is connected to ground by the carrier. All of the unit drains are connected together on the substrate to form a second electrode of the FET. The FET is reverse biased to cause a current to flow from the first electrode to the second electrode, whereby the first and second electrodes are a drain and a source, respectively, of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.