Double crucible crystal growing apparatus

US4190631A · kind A · utility

Assignee

• Western Electric Company, Inc. · US

Inventors

• Thomas J. Dewees · Levittown, US
• John Stewart Fangman · Ewing Township, US
• Wen-Bin Lin · Dresden, DE

Key dates

• Filing date: Sep 21, 1978
• Grant date: Feb 26, 1980
• Expiry date: Sep 21, 1998

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1052
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).