AC silicon PN junction photodiode light-valve substrate
US4191452A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1977 |
| Grant date | Mar 4, 1980 |
| Priority date | — |
| Expiry date | Dec 28, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a PIN photodiode structure. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response an capable of operating over a wide frequency range. A PIN photodiode structure is provided on one side of the substrate next to the MOS capacitor to deplete the substrate of its mobile charge carriers during a portion of the AC cycle and to collect the electric field-guided signal representing charge carriers that are generated or introduced into the substrate by an input mechanism. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.