Growth of synthetic diamonds
US4191735A · kind A · utility
48Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1978 |
| Grant date | Mar 4, 1980 |
| Priority date | — |
| Expiry date | Feb 17, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B1/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitisation temperature, such that the diamond crystal structure is maintained during growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.