Apparatus for forming an aluminum interconnect structure on an integrated circuit chip
US4192729A · kind A · utility
18Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1978 |
| Grant date | Mar 11, 1980 |
| Priority date | — |
| Expiry date | Apr 3, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for forming an interconnect structure on an integrated circuit chip by employing a single chamber for both the required etching and anodization. It has been discovered that an etchant-electrolyte such as phosphoric acid solution in the ratios of one part phosphoric acid to four parts of water can serve as both an etchant and an electrolyte without causing deterioration of the photoresist pattern representing the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.