Patent · US Expired

Method for producing a capacitor dielectric with inner blocking layers

US4192840A · kind A · utility

5Cited by

6References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Helmut Schmelz · Prien am Chiemsee, DE
Werner Schwaen · Munich, DE

Key dates

Filing date	May 23, 1978
Grant date	Mar 11, 1980
Priority date	—
Expiry date	May 23, 1998

Classification

Technology area (CPC H)Electricity
CPC primaryH01B3/12
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200.degree. to 800.degree. C./h towards a sinter temperature, and a cooling-off speed of 10.degree. to 100.degree. C./h to about 350.degree. C. below the sinter temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.