Rare earth semiconductor laser
US4193044A · kind A · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1978 |
| Grant date | Mar 11, 1980 |
| Priority date | — |
| Expiry date | Jan 26, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A rare earth semiconductor laser is disclosed comprising a semiconductor erial of the type Ln.sub.2 TX.sub.5 where Ln is a rare earth element, T is zirconium or hafnium, and X is sulfur or selenium. The semiconductor contains neodymium as a dopant rare earth ion and can be made to lase by applying an electric voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.