Infrared photolithographic process for constructing self-aligned electrodes
US4193183A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 1978 |
| Grant date | Mar 18, 1980 |
| Priority date | — |
| Expiry date | Jun 26, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for constructing self-aligned electrodes overlying a surface of a semiconductor substrate is disclosed. The process utilizes a substrate which is substantially transparent to infrared radiation. One step of the process includes forming spaced apart ones of the electrodes with a conductive material that is highly absorbtive of infrared radiation. Subsequently, a continuous layer of heat sensitive polymer is formed over and between these spaced apart electrodes. The resulting structure is exposed to infrared radiation which heats the spaced apart electrodes. This heat polymerizes the heat sensitive polymer layer in all regions that directly overlie the spaced apart electrodes. These polymerized regions form a mask that is used to construct other electrodes between and in alignment with the spaced apart electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.