Semiconductor device
US4194162A · kind A · utility
12Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1978 |
| Grant date | Mar 18, 1980 |
| Priority date | — |
| Expiry date | Mar 22, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/187
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.