Electrolytic etch preparation of semiconductor surfaces
US4194954A · kind A · utility
4Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1978 |
| Grant date | Mar 25, 1980 |
| Priority date | — |
| Expiry date | Mar 8, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface of a semiconductor is prepared by electrolytically removing the surface of the semiconductor. A two component electrolyte is used. A first component forms an oxide on the surface of the semiconductor and the second component dissolves the oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.