Apparatus for making a single crystal of III-V compound semiconductive material
US4196171A · kind A · utility
12Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1978 |
| Grant date | Apr 1, 1980 |
| Priority date | — |
| Expiry date | Aug 3, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1036
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus includes a sealed vessel, a crucible received in the sealed vessel to hold a first molten liquid of III-V compound semiconductive material and a second molten liquid of an encapsulating material overlying the first molten liquid, and floating member having an opening for defining the cross sectional outline of a single crystal while being grown and positioned in the interface between the first and second molten liquids. The floating member is made from a mixed material consisting essentially of at least one of oxides of yttrium and the lanthanum series elements, alumina and silicon nitride each in a prescribed amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.