Semiconductor device drain contact configuration

US4196439A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• William C. Niehaus · New Providence, US
• Stuart H. Wemple · Madison, US

Key dates

• Filing date: Jul 3, 1978
• Grant date: Apr 1, 1980
• Expiry date: Jul 3, 1998

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/877

Abstract

Disclosed are unipolar semiconductor devices such as, e.g., metal-semiconductor field effect transistors. The disclosed devices comprise an n- or p-type active layer on a substrate and a drain contact on the active layer. The active layer comprises two contiguous regions, namely a first, more heavily doped region which is in contact with the drain contact and a second, less heavily doped region which in a direction perpendicular to the active layer extends through the remainder of the active layer. In the disclosed configuration the more heavily doped region extends past the edge of the drain contact towards a source of free carriers such as e.g., a source contact. Devices incorporating such configuration of regions in the active layer are more resistant to burnout and are capable of operating at higher voltage and power levels.