Lateral PNP or NPN with a high gain
US4196440A · kind A · utility
22Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1978 |
| Grant date | Apr 1, 1980 |
| Priority date | — |
| Expiry date | May 25, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/085
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region are described. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.