Sub 100A range line width pattern fabrication
US4197332A · kind A · utility
9Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1979 |
| Grant date | Apr 8, 1980 |
| Priority date | — |
| Expiry date | Feb 12, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.