Method for the preparation of thin films of high-temperature-resistant metals such as tungsten, molybdenum, rhenium or osmium

US4198449A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Freller · Westerburg, DE
• Gunther Titze · Nuremberg, DE

Key dates

• Filing date: Apr 20, 1978
• Grant date: Apr 15, 1980
• Expiry date: Apr 20, 1998

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/06
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed herein is the preparation of thin films of tungsten, molybdenum, rhenium or osmium on a high-temperature resistant substrate by thermal evaporation in a high vacuum, wherein the oxides of these high-temperature-resistant metals are evaporated simultaneously with a reduction metal in a manner such that the oxide molecules and the metal atoms or molecules impinge together on the surface of the substrate heated to a predetermined temperature and react with each other there chemically, so that the high-temperature-resistant metal oxides are reduced and the reduction metals are oxidized. In this process, the high-temperature-resistant metal is deposited on the surface of the substrate, and the oxides of the reduction metals evaporate, either completely or partially, and are pumped off.