Method for producing metal patterns on silicon wafers for thermomigration
US4199379A · kind A · utility
2Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 15, 1978 |
| Grant date | Apr 22, 1980 |
| Priority date | — |
| Expiry date | Sep 15, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing metal patterns on silicon wafers prior to a thermomigration process, including covering the surface of a wafer completely with a metal film, producing a photoresist pattern on portions of the metal film corresponding to a predetermined thermomigration pattern, etching away the uncovered portions of the metal film, removing the photoresist film, and annealing the remaining metal film pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.