Monolithic semiconductor switching device
US4199774A · kind A · utility
105Cited by
5References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 18, 1978 |
| Grant date | Apr 22, 1980 |
| Priority date | — |
| Expiry date | Sep 18, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
An electrical circuit device made in integrated monolithic form has low level operating characteristics of a MOS device and high level operating characteristics of a Triac. The structure includes two double diffused MOS transistors which have merged drain regions. At higher voltage and current levels a lateral Triac structure is triggered by the MOS devices. Alternatively, separate terminal contacts can be made to the P and N regions comprising the MOS transistor source and channel regions with the Triac triggered conventionally by an externally applied control voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.