Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics
US4201598A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1977 |
| Grant date | May 6, 1980 |
| Priority date | — |
| Expiry date | Aug 1, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.