Process for making a negative resistance diode utilizing spike doping
US4201604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1976 |
| Grant date | May 6, 1980 |
| Priority date | — |
| Expiry date | Sep 8, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/605
Abstract
A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vapor deposition growth techniques employing a furnace tube within a multiple temperature zone reaction furnace. The doping spike is produced by injecting under pressure a fixed predetermined volume of dopant into the furnace tube. An avalanche region is grown over the doping spike and a Schottky barrier contact or semiconducting material of the opposite conductivity type grown over the avalanche region. Avalanche regions having a length less than 15% of the total active length of the device and doping spikes having a width of 500 A or less are disclosed in a high-efficiency device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.