Lanthanum indium gallium garnets
US4202930A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1978 |
| Grant date | May 13, 1980 |
| Priority date | — |
| Expiry date | Sep 13, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Congruently melting compositions of gallium garnets containing lanthanum are provided in which trivalent indium is partially substituted for gallium. The lanthanum indium gallium garnets have larger lattice parameters than other rare earth gallium garnets. The lanthanum indium gallium garnets of the invention are represented by the formula EQU La.sub.a In.sub.b Ga.sub.c O.sub.12 where "a" ranges from greater than about 3.24 to less than 3.32, "b" ranges from greater than about 1.84 to less than about 2.24 and "c" ranges from greater than about 2.48 to less than about 2.88, the total of "a" plus "b" plus "c" being 8. The garnets of the invention are useful as single crystal substrates for supporting magneto-optic and magnetic garnet thin films having large lattice parameters approaching 13 A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.