Crystal wafer rack structures and the method of producing the same
US4203940A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1974 |
| Grant date | May 20, 1980 |
| Priority date | — |
| Expiry date | Sep 27, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67316
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Crystal wafer rack structures composed of Si or SiC are produced by forming a tube-shaped body, for example, of Si, by pyrolytic deposition of silicon on a heated graphite mandrel from a suitable gaseous atmosphere with the removal of the mandrel without destroying the body and then machining the tube so that two separate wall portions are formed therefrom which extend parallel to the tube axis and are joined to one another by at least one bridging portion in the form of a closed arc between such wall portions and a plurality of uniformly spaced support grooves are provided in each of the wall portions for supporting the wafers during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.