Selective etching of polymeric materials embodying silicones via reactor plasmas
US4209356A · kind A · utility
6Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 18, 1978 |
| Grant date | Jun 24, 1980 |
| Priority date | — |
| Expiry date | Oct 18, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon is employed as a masking material for the selective plasma chemical etching of a coating material of a polyimide-silicone copolymer disposed on selective surface areas of electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.