Selenium layer piezoelectric device
US4209725A · kind A · utility
7Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1978 |
| Grant date | Jun 24, 1980 |
| Priority date | — |
| Expiry date | Oct 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/853
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention relates to piezoelectric devices employing a piezoelectric layer deposited on a substrate devoid of piezoelectric properties at ambient temperature. The device in accordance with the invention is provided with a piezoelectric layer made from a mono-atomic crystalline material, namely selenium. The invention is applicable to the excitation of surface elastic waves along non-piezoelectric substrates, to the excitation of bulk elastic waves and to the detection of infrared radiations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.