Solid-state imaging device
US4209806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1978 |
| Grant date | Jun 24, 1980 |
| Priority date | — |
| Expiry date | Jul 27, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.