Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers
US4210464A · kind A · utility
10Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1978 |
| Grant date | Jul 1, 1980 |
| Priority date | — |
| Expiry date | Jan 31, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.