Semiconductor controlled rectifier with configured cathode to eliminate hot-spots
US4210924A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1978 |
| Grant date | Jul 1, 1980 |
| Priority date | — |
| Expiry date | Sep 12, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/291
Abstract
A semiconductor controlled rectifier comprises a semiconductor substrate having four layers of alternate n- and p-type conductivities and includes two main surfaces one of which is formed of the exposed surface of first and second layers and the other of which is formed of the exposed surface of a fourth layer. A gate electrode of a rectangular shape is disposed on the second layer on the one main surface and a cathode electrode is disposed on the first layer so as to extend along at least two sides of the rectangular gate electrode. The cathode electrode portion extending along the short side of the rectangular gate extends slightly beyond a p-n junction defined between the first and second layers, so as to be in ohmic contact with the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.