Light emitting devices
US4212021A · kind A · utility
13Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1979 |
| Grant date | Jul 8, 1980 |
| Priority date | — |
| Expiry date | May 22, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.