Insulated-gate semiconductor device
US4213140A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1978 |
| Grant date | Jul 15, 1980 |
| Priority date | — |
| Expiry date | Jul 6, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.