Selective plasma vapor etching process
US4213818A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1979 |
| Grant date | Jul 22, 1980 |
| Priority date | — |
| Expiry date | Jan 4, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective plasma vapor etching process for performing operations on a solid body formed of at least two different materials capable of being vapor etched exposed at, at least, one surface of the body, with the body being disposed in a chamber having a partial vacuum therein. A gas plasma is created within the chamber to produce active species of atoms and molecules so that these species come into contact with the surface of the body to chemically react at least one of the materials with active species from the gas plasma to form a gas-non-gaseous chemical reaction by controlling the concentration and reaction kinetics of specific species, and by controlling the activation energy of the etching reactions to produce a difference in rates between the materials so that the etching is more selective to one material over the other. The species is also controlled by the frequency of the electromagnetic energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.