Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion
US4214254A · kind A · utility
5Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1978 |
| Grant date | Jul 22, 1980 |
| Priority date | — |
| Expiry date | Mar 1, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/221
Abstract
A semiconductor controlled rectifier comprising an auxiliary thyristor region turned on by a gating signal and a main thyristor region turned on by being gated by the turn-on current flowing through the auxiliary thyristor region, wherein the life time of carriers in the auxiliary thyristor region is made shorter than that of the carriers in the main thyristor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.