Method for control of an open gallium diffusion

US4217154A · kind A · utility

Assignee

• BBC Brown, Boveri & Company Ltd. · CH

Inventors

• Gerhard Popp · Lampertheim, DE
• Gerhard Held · Bürstadt, DE

Key dates

• Filing date: Oct 30, 1978
• Grant date: Aug 12, 1980
• Expiry date: Oct 30, 1998

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/935
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for controlling a gallium diffusion with at least one silicon wafer, wherein precisely dosed amounts of hydrogen, oxygen, and optionally nitrogen are mixed in a combustion chamber where the hydrogen and oxygen is converted into water vapor and hydrogen. The combustion chamber is connected to a source portion of the diffusion oven, wherein is contained a gallium oxide containing crucible. The water vapor, hydrogen (and nitrogen) mixture is then passed from the combustion chamber to the source over where the volatile sub-oxide (Ga.sub.2 O), is produced and then carried in a gas stream to the silicon wafer contained in a main portion of the diffusion oven for diffusion therein.