Method of inducing differential etch rates in glow discharge produced amorphous silicon
US4217393A · kind A · utility
6Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1978 |
| Grant date | Aug 12, 1980 |
| Priority date | — |
| Expiry date | Jul 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.