Selective chemical sensitive FET transducer
US4218298A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 3, 1978 |
| Grant date | Aug 19, 1980 |
| Priority date | — |
| Expiry date | Nov 3, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.