Gas-phase process for the production of an epitaxial layer of indum phosphide
US4220488A · kind A · utility
34Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 6, 1979 |
| Grant date | Sep 2, 1980 |
| Priority date | — |
| Expiry date | Mar 6, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.